Search results for "High-κ dielectric"
showing 10 items of 11 documents
Evaluation and Comparison of Novel Precursors for Atomic Layer Deposition of Nb2O5 Thin Films
2012
Atomic layer deposition (ALD) of Nb2O5 thin films was studied using three novel precursors, namely, tBuN═Nb(NEt2)3, tBuN═Nb(NMeEt)3, and tamylN═Nb(OtBu)3. These precursors are liquid at room temperature, present good volatility, and are reactive toward both water and ozone as the oxygen sources. The deposition temperature was varied from 150 to 375 °C. ALD-type saturative growth modes were confirmed at 275 °C for tBuN═Nb(NEt2)3 and tBuN═Nb(NMeEt)3 together with both oxygen sources. Constant growth rate was observed between a temperature regions of 150 and 325 °C. By contrast, amylN═Nb(OtBu)3 exhibited limited thermal stability and thus a saturative growth mode was not achieved. All films we…
Investigation of ZrO[sub 2]–Gd[sub 2]O[sub 3] Based High-k Materials as Capacitor Dielectrics
2010
Atomic layer deposition (ALD) of ZrO 2 ―Gd 2 O 3 nanolaminates and mixtures was investigated for the preparation of a high permittivity dielectric material. Variation in the relative number of ALD cycles for constituent oxides allowed one to obtain films with controlled composition. Pure ZrO 2 films possessed monoclinic and higher permittivity cubic or tetragonal phases, whereas the inclusion of Gd 2 O 3 resulted in the disappearance of the monoclinic phase. Changes in phase composition were accompanied with increased permittivity of mixtures and laminates with low Gd content. Further increase in the lower permittivity Gd 2 O 3 content above 3.4 cat. % resulted in the decreased permittivity…
Energy and spatial distribution of traps in SiO2/Al 2O3 nMOSFETs
2006
The energy and spatial profiling of the interface and near-interface traps in n-channel MOSFETs with SiO2/Al2O3 gate dielectrics is investigated by charge-pumping (CP) measurements. By increasing the amplitude as well as lowering the frequency of the gate pulse, an increase of the charge recombined per cycle was observed, and it was explained by the contributions of additional traps located higher in energy and deeper in position at the SiO2/Al2O3 interface. In addition, CP currents, acquired after different constant voltage stress, have been used to investigate the trap generation in this dielectric stack. © 2006 IEEE.
Effect of high-k materials in the control dielectric stack of nanocrystal memories
2004
In this paper we studied program/erase characteristics by FN tunneling in Si nanocrystal memories. Starting from a very good agreement between experimental data and simulations in the case of a memory cell with a thin tunnel oxide, Silicon dots as medium for charge storage, and a CVD silicon dioxide used as control dielectric, we present estimated values of the charge trapping when a high-k material is present in the control dielectric. We then show preliminary results of nanocrystal memories with control dielectric containing high-k materials. ©2004 IEEE.
Metamaterial coatings for subwavelength-resolution imaging
2011
Coating lenses are membranes made of materials exhibiting negative index of refraction and deposited on other media with high dielectric constant e 3 . Unfortunately far-field imaging suffers from centrosymmetric aberrations. We propose a simple procedure to compensate partially deviations from ray-tracing perfect imaging in asymmetric metamaterial lenses. We also show that, under some circumstances, coating superlens may recover subwavelength information transmitted in a relative spatial spectrum ranging from 1 to √e 3 .
High-Speed Memory from Carbon Nanotube Field-Effect Transistors with High-κ Gate Dielectric
2009
We demonstrate 100 ns write/erase speed of single-walled carbon nanotube field-effect transistor (SWCNT-FET) memory elements. With this high operation speed, SWCNT-FET memory elements can compete with state of the art commercial Flash memories in this figure of merit. The endurance of the memory elements is shown to exceed 104 cycles. The SWCNT-FETs have atomic layer deposited hafnium oxide as a gate dielectric, and the devices are passivated by another hafnium oxide layer in order to reduce surface chemistry effects. We discuss a model where the hafnium oxide has defect states situated above, but close in energy to, the band gap of the SWCNT. The fast and efficient charging and discharging…
Tuning the dielectric properties of hafnium silicate films
2007
The influence of Si concentration in hafnium silicate dielectrics on thermal stability and dielectric permittivity was analyzed. A phase diagram was developed using GIXRD and FTIR measurement. The stabilization of the ''higher-k'' cubic/tetragonal phase for annealing temperatures up to 1000^oC with a steady increase in capacitance was demonstrated for Hf"0"."9"4Si"0"."0"6O"2 films. It was also shown that the stabilization of nano-crystalline Hf"0"."8"0Si"0"."2"0O"2 films can be realized for annealing temperatures up to 900^oC. The influence of TiN electrodes on the dielectric constant and the leakage current characteristic was also investigated. A permittivity increase for annealing tempera…
Improvement of the P/E window in nanocrystal memories by the use of high-k materials in the control dielectric
2005
Abstract In this paper nanocrystals memories program curves are shown and their saturation points (steady state condition) can be observed. We present a model that relates the voltage shift at the steady state ( Δ V T ss ) to the gate program voltage (VG). Starting from a good agreement between experimental data and simulations for nanocrystals memory cells with a conventional dielectric structure (SiO2), we present the estimated values of the Δ V T ss vs VG for different control stacks. Our investigation shows an improvement if a material with a high dielectric constant and a small conduction band-offset with respect to the SiO2, is placed between two SiO2 layers when the first of them is …
ZrTiO4 materials obtained by spark plasma reaction-sintering
2014
Zirconium titanate (ZrTiO4), have many attractive properties such as high resistivity, high dielectric constant, high permittivity at microwave frequencies and excellent temperature stability for microwave properties. Zirconium titanate dense materials are proposed for many structural applications, but fully reacted and completely dense pieces are difficult to obtain by conventional routes. In this work, fully dense zirconium titanate materials (∼98%) were obtained at lower temperatures (1300-1400 C) and short processing time by non-conventional technique; spark plasma-reaction sintering (SPRS). Homogeneous and stable starting powders mixture with the adequate composition was prepared from …
Identification of yrast high-Kintrinsic states inOs188
2009
The high-spin structure of the $Z=76$ nucleus $^{188}\mathrm{Os}$ has been studied using the incomplete fusion reaction $^{7}\mathrm{Li}+^{186}\mathrm{W}$. A ${K}^{\ensuremath{\pi}}={10}^{+}$ band has been established up to spin $({24}^{+})$ and its crossing with the ground-state band has been studied. In addition, intrinsic high-$K$ states have been identified and on top of two of them, ${K}^{\ensuremath{\pi}}={7}^{\ensuremath{-}}$ and ${K}^{\ensuremath{\pi}}={10}^{\ensuremath{-}}$, regular bands have been observed. The ${K}^{\ensuremath{\pi}}={16}^{+}$ and ${K}^{\ensuremath{\pi}}={18}^{+}$ states are yrast whereas the ${K}^{\ensuremath{\pi}}={14}^{+}$ level lies only 33 keV above the yras…